Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes
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DOI: 10.1063/1.5094864
Abstract: In this work, analysis and simulation of all experimentally observed switching modes in hafnium oxide based resistive random access memories are carried out using a simplified electrical conduction model. To achieve switching mode variation, two… read more here.
Keywords: resistive random; analysis simulation; switching modes; simulation ... See more keywords