Electrically-controlled nonlinear switching and multi-level storage characteristics in WO x film-based memory cells
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DOI: 10.1016/j.jpcs.2018.01.019
Abstract: Abstract Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation memory due to its scalability, high integration density and non-volatile storage characteristics. Here, the multiple electrical characteristics in… read more here.
Keywords: storage; nonlinear switching; multi level; switching multi ... See more keywords