Investigation of resistive switching in PVP and ultra-thin HfOx based bilayer hybrid RRAM
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DOI: 10.1016/j.ssi.2018.08.003
Abstract: Abstract Hybrid CBRAM devices based on PVP/HfOx bilayer were investigated for their switching performance. A reliable and low voltage bipolar resistive switching operation was observed in these devices with repeatability of 300 cycles, Ion/Ioff of 80,… read more here.
Keywords: hfox; switching pvp; investigation resistive; bilayer ... See more keywords