Ni/GeOx/p+ Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling
Sign Up to like & getrecommendations! Published in 2019 at "Vacuum"
DOI: 10.1016/j.vacuum.2018.12.020
Abstract: Abstract In this study, a fully Si-compatible resistive-switching random-access memory (ReRAM) employing GeOx as the switching layer is fabricated, analyzed, and characterized. I–V curves and endurance characteristics have been obtained from the measurement of fabricated… read more here.
Keywords: random access; access memory; switching random; resistive switching ... See more keywords
LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory
Sign Up to like & getrecommendations! Published in 2020 at "Applied Physics Express"
DOI: 10.35848/1882-0786/ab88c1
Abstract: This study reports the low-resistance state retention fail of InGaZnO resistive-switching random access memory (ReRAM) under constant DC bias stress conditions by Joule heating effect. There were the abrupt state changes of InGaZnO ReRAM devices… read more here.
Keywords: ingazno resistive; retention fail; retention; resistive switching ... See more keywords