Tuning the resistive switching in tantalum oxide-based memristors by annealing
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DOI: 10.1063/5.0004722
Abstract: A key step in engineering resistive switching is the ability to control the device switching behavior. Here, we investigate the possibility to tune the resistive switching of tantalum oxide (TaOx)-based memristors from a non-switchable state… read more here.
Keywords: tuning resistive; switching tantalum; tantalum oxide; resistive switching ... See more keywords