Shift of Switching Threshold in Low-Dimensional Semiconductor-Based Complementary Inverters via Inkjet Printing.
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DOI: 10.1088/1361-6528/ac67ab
Abstract: MoS2 crystals grown by chemical vapor deposition are suited for realization of practical 2D semiconductor-based electronics. In order to construct complementary circuits with n-type MoS2, another p-type semiconductor, whose performance can be adjusted corresponding to… read more here.
Keywords: semiconductor; complementary inverters; switching threshold; semiconductor based ... See more keywords