Remote control of resistive switching in TiO2 based resistive random access memory device
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DOI: 10.1038/s41598-017-17607-4
Abstract: We report on the magnetic field control of a bipolar resistive switching in Ag/TiO2/FTO based resistive random access memory device through I–V characteristics. Essentially, in the presence of magnetic field and in the low resistance state,… read more here.
Keywords: resistive random; switching tio2; control; based resistive ... See more keywords