Effectively reducing the switching voltages based on CdS/ZnO heterostructure for resistive switching memory
Sign Up to like & getrecommendations! Published in 2019 at "Solid-State Electronics"
DOI: 10.1016/j.sse.2018.11.004
Abstract: Abstract Due to the two-terminal structure, non-destructive read and high integrable density, resistive switching random access memory (RRAM) has attracted much attention for its potential applications in semiconductor industry. Unfortunately, the unexpected failure behaviour is… read more here.
Keywords: memory; resistive switching; zno heterostructure; cds zno ... See more keywords