Three-fold Symmetric Doping Mechanism in GaAs Nanowires.
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DOI: 10.1021/acs.nanolett.7b00794
Abstract: A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants introduced in situ during molecular beam epitaxy growth of the nanowires… read more here.
Keywords: fold symmetric; symmetric doping; three fold; gaas nanowires ... See more keywords