Analytical I–V and C–V models for symmetric double-gate AOSTFTs
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DOI: 10.1088/1361-6641/ac0855
Abstract: In this article we present a full physical analytical model (FAM) for symmetric double-gate amorphous oxide semiconductor TFTs (DG AOSTFTs). The current–voltage (I–V) model is physically described for the above-threshold operation regime. In this case,… read more here.
Keywords: double gate; symmetric double; semiconductor; model ... See more keywords