Multiple polarization states in symmetric ferroelectric heterostructures for multi-bit non-volatile memories.
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DOI: 10.1039/c7nr06354g
Abstract: Here we report a ferroelectric capacitor structure obtained by alternating ferroelectric and insulator thin-film layers which allows an increase of up to 2n polarization states, with n the number of ferroelectric layers. Four and up… read more here.
Keywords: states symmetric; symmetric ferroelectric; multiple polarization; polarization ... See more keywords