Polymer bulk-heterojunction synaptic field-effect transistors with tunable decay constant
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DOI: 10.1039/d0tc05629d
Abstract: Small angle-neutron scattering was used to elucidate the current decay mechanism of synaptic field-effect transistors based on a polymer bulk p–n heterojunction. read more here.
Keywords: synaptic field; bulk heterojunction; effect transistors; polymer bulk ... See more keywords