Towards low-dimensional hole systems in Be-doped GaAs nanowires.
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DOI: 10.1088/1361-6528/aa6067
Abstract: GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying… read more here.
Keywords: towards low; hole systems; low dimensional; systems doped ... See more keywords