Atomic Layer Deposited Ta2O5-x Nano-Islands for Charge Trapping Memory Devices
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DOI: 10.1039/d4tc03089c
Abstract: The charge trapping memory (CTM) boasts numerous advantages to replace conventional flash memory. In this work, atomic layer deposited Ta2O5-x nano-islands were employed as charge trapping units in Pt/Al2O3/Ta2O5-x nano-islands/Al2O3/Si... read more here.
Keywords: nano islands; charge trapping; atomic layer; ta2o5 nano ... See more keywords