The Over-Reset Phenomenon in Ta2O5 RRAM Device Investigated by the RTN-Based Defect Probing Technique
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DOI: 10.1109/led.2018.2833149
Abstract: Despite the tremendous efforts in the past decade devoted to the development of filamentary resistive-switching devices (RRAM), there is still a lack of in-depth understanding of its over-reset phenomenon. At higher reset stop voltages that… read more here.
Keywords: reset; ta2o5 rram; reset phenomenon; based defect ... See more keywords