First principles calculations of intrinsic mobilities in tin-based oxide semiconductors SnO, SnO2, and Ta2SnO6
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DOI: 10.1063/1.5109265
Abstract: The development of high-performance p-type oxides with high hole mobility and a wide bandgap is critical for the applications of metal oxide semiconductors in vertically integrated CMOS devices [Salahuddin et al., Nat. Electron. 1, 442… read more here.
Keywords: oxide semiconductors; sno sno2; mobility; ta2sno6 ... See more keywords