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Published in 2021 at "Materials Chemistry and Physics"
DOI: 10.1016/j.matchemphys.2021.124281
Abstract: Abstract Properties of indium gallium zinc oxide (In2Ga2ZnO7) thin films on silicon (Si) substrate prepared using sol-gel method in response to annealing time were thoroughly studied. Post-annealing treatment for 5, 15, 30 and 60 min has…
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Keywords:
time;
annealing time;
in2ga2zno7 thin;
tailoring in2ga2zno7 ... See more keywords