Phase separation in amorphous tantalum oxide from first principles
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DOI: 10.1063/5.0011390
Abstract: The transition between Ta2O5 and TaO2 governs resistive switching in tantalum oxide-based resistive random access memory. Despite its importance, the Ta2O5–TaO2 transition is scarcely described in the literature, in part because the tantalum oxide layer… read more here.
Keywords: phase separation; tao2; ta2o5; tantalum oxide ... See more keywords