Modification of spin-obit torques using the Ta oxidation buffer layer
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Magnetism and Magnetic Materials"
DOI: 10.1016/j.jmmm.2019.02.057
Abstract: Abstract We carefully investigated the influence of the thickness of TaOx buffer layer on the perpendicular magnetic anisotropy and spin-obit torques in Pt/Co/Pt trilayers. Using the first and second harmonic Hall voltage measurements, we found… read more here.
Keywords: obit torques; buffer layer; layer; thickness ... See more keywords
Exchange of ions across TiN/TaOx interface during electro-formation of TaOx-based resistive switching devices.
Sign Up to like & getrecommendations! Published in 2020 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.0c06960
Abstract: Valence Change Model describes the resistive switching in metal oxides-based devices as due to electro-reduction of the oxide and subsequent electro-migration of oxygen vacancies. Here we present cross-sectional X-Ray Energy Dispersive Spectroscopy elemental maps of… read more here.
Keywords: electro formation; tin; exchange; taox ... See more keywords
Improving HfO2-Based Resistive Switching Devices by Inserting a TaOx Thin Film via Engineered In Situ Oxidation.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c03364
Abstract: Resistive switching (RS) devices with binary and analogue operation are expected to play a key role in the hardware implementation of artificial neural networks. However, state of the art RS devices based on binary oxides… read more here.
Keywords: hfo2; switching devices; taox; resistive switching ... See more keywords
Performance enhancement of TaOx resistive switching memory using graded oxygen content
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5048098
Abstract: We compared the resistive switching performances of built-in graded oxygen concentration TaOx films and uniform TaOx films under the 100 μA compliance current. The device with a graded oxygen concentration demonstrates increased low resistance and high… read more here.
Keywords: oxygen; graded oxygen; oxygen concentration; taox ... See more keywords
Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO2/TaOx/TaN Devices
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12234206
Abstract: As artificial intelligence technology advances, it is necessary to imitate various biological functions to complete more complex tasks. Among them, studies have been reported on the nociceptor, a critical receptor of sensory neurons that can… read more here.
Keywords: nociceptor; taox tan; hfo2 taox; taox ... See more keywords