Correlation between the transport mechanisms in conductive filaments inside Ta 2 O 5 -based resistive switching devices and in substoichiometric TaO x thin films
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DOI: 10.1063/1.5024504
Abstract: Conductive filaments play a key role in redox-based resistive random access memory (ReRAM) devices based on the valence change mechanism, where the change of the resistance is ascribed to the modulation of the oxygen content… read more here.
Keywords: reram devices; thin films; conductive filaments; transport ... See more keywords