Intense electroluminescence from Al2O3/Tb2O3 nanolaminate films fabricated by atomic layer deposition on silicon.
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DOI: 10.1364/oe.26.009344
Abstract: Intense electroluminescence (EL) from Tb3+ ions in the Al2O3/Tb2O3 nanolaminate films is achieved in a metal-oxide-semiconductor structure fabricated on silicon, utilizing atomic layer deposition. Precisely controlling of the nanolaminates enables the study on the influence… read more here.
Keywords: al2o3 tb2o3; layer; tb2o3 nanolaminate; atomic layer ... See more keywords