TCAD simulation of 3D silicon sensors for thermal neutron imaging
Sign Up to like & getrecommendations! Published in 2025 at "Journal of Instrumentation"
DOI: 10.1088/1748-0221/20/02/c02011
Abstract: Within the INFN HYDE project, we have developed pixelated hybrid detectors for thermal neutron imaging. Devices are based on microstructured silicon sensors coupled with converter materials. Compared to standard 3D sensors, the proposed device offers… read more here.
Keywords: neutron imaging; thermal neutron; tcad simulation; simulation silicon ... See more keywords
TCAD Simulation of Single Event Transient in Si Bulk MOSFET at Cryogenic Temperature
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Access"
DOI: 10.1109/access.2022.3206401
Abstract: In this paper, the functional relationship between temperature and single event transient currents caused by heavy-ion striking using TCAD simulation is investigated from 77K to 300 K on 65nm Si bulk n MOSFET. TCAD simulation… read more here.
Keywords: event transient; bulk mosfet; tcad simulation; temperature ... See more keywords
A 650 V Super-Junction MOSFET With Novel Hexagonal Structure for Superior Static Performance and High BV Resilience to Charge Imbalance: A TCAD Simulation Study
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2016.2631619
Abstract: A superjunction MOSFET (SJ-MOSFET) with a new fully close-packed hexagonal pattern for its superjunction (SJ) region is proposed. According to TCAD simulation, the proposed device can accommodate highly doped n-pillars with no significant degradation of… read more here.
Keywords: mosfet; tcad simulation; resilience charge; device ... See more keywords