Sign Up to like & get
recommendations!
1
Published in 2021 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-021-01724-5
Abstract: We propose a novel deep gate lateral double diffused metal-oxide-semiconductor (LDMOS) field-effect transistor in partial silicon-on-insulator (PSOI) technology for achieving high breakdown voltage and reduced power dissipation. In the proposed device, an N+ well is…
read more here.
Keywords:
breakdown voltage;
voltage;
deep gate;
technology achieving ... See more keywords