Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
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DOI: 10.3390/en10020153
Abstract: GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field. This paper reviews… read more here.
Keywords: paper; gate; technology reliability; gan gate ... See more keywords