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Published in 2018 at "Electronic Materials Letters"
DOI: 10.1007/s13391-018-0022-5
Abstract: We have investigated the low temperature (LT) growth of GeSn–Ge–Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and…
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Keywords:
low temperature;
system;
temperature;
epitaxy strained ... See more keywords
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Published in 2019 at "CrystEngComm"
DOI: 10.1039/c9ce00338j
Abstract: Single-crystal like WTe2 films are grown by exploiting van der Waals epitaxy at low temperatures, using pulsed laser deposition.
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Keywords:
heterostructure films;
tungsten telluride;
telluride heterostructure;
epitaxy tungsten ... See more keywords
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Published in 2019 at "ECS Journal of Solid State Science and Technology"
DOI: 10.1149/2.0071908jss
Abstract: As CMOS scaling proceeds with sub-10 nm nodes, new architectures and materials are implemented to continue increasing performances at constant footprint. Strained and stacked channels and 3D-integrated devices have for instance been introduced for this…
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Keywords:
temperature;
group semiconductors;
low temperature;
semiconductors use ... See more keywords