Temperature and Injection Dependence of Photoluminescence Decay in Midwave Infrared HgCdTe
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DOI: 10.1007/s11664-017-5728-x
Abstract: Photoluminescence decay (PLD) measurements have been performed on mid-wave infrared (MWIR) Hg-vacancy p-doped HgCdTe samples at temperatures ranging from 85 K to 330 K. The doping level is $$p_{0} = 6 \times 10^{15} \;{\hbox{cm}}^{ - 3}$$p0=6×1015cm-3 at… read more here.
Keywords: photoluminescence decay; temperature injection; temperature;