Articles with "temperature instability" as a keyword



Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

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Published in 2024 at "Advanced Electronic Materials"

DOI: 10.1002/aelm.202400464

Abstract: Carbon nanotube (CNT) is widely regarded as a promising candidate for constructing sub‐10 nm field‐effect transistors (FETs). However, limited attention is carried out on the reliability of CNT FETs, which is critical for practical application.… read more here.

Keywords: carbon nanotube; temperature instability; cnt; bias temperature ... See more keywords

Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability

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Published in 2017 at "Solid-state Electronics"

DOI: 10.1016/j.sse.2017.06.003

Abstract: Abstract Bias temperature instability (BTI) is one of the critical device degradation mechanisms in poly-Si/SiON and metal gate/high- k complementary metal-oxide-semiconductor (CMOS) technologies. Using the pre- and post-BTI flicker noise measurements, we investigated the bulk… read more here.

Keywords: bias temperature; noise; sion; mghk mosfets ... See more keywords

Multifaceted impacts of reliability issues: trap dynamics, positive bias temperature instability, and effect of temperature on the HSSP-nTFET

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Published in 2025 at "Semiconductor Science and Technology"

DOI: 10.1088/1361-6641/adb87c

Abstract: This study investigates the influence of interface trap charges (ITCs) on the performance parameters of the proposed lateral hetero-stacked source with pocket n-type tunneling field-effect transistor (HSSP-nTFET). The influence of different concentrations of donor and… read more here.

Keywords: temperature; hssp ntfet; effect; reliability ... See more keywords

Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET

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Published in 2020 at "IEEE Access"

DOI: 10.1109/access.2020.2997463

Abstract: The negative bias temperature instability (NBTI) mechanisms for Core and input/output (I/O) devices from a 130 nm partially-depleted silicon on insulator (PDSOI) technology are investigated. The I/O device degrades more than the Core device under… read more here.

Keywords: temperature instability; gate; bias temperature; negative bias ... See more keywords

Impact of Dimensions of Memory Periphery FinFETs on Bias Temperature Instability

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Published in 2020 at "IEEE Transactions on Device and Materials Reliability"

DOI: 10.1109/tdmr.2020.2984957

Abstract: Fin height and width dependence of negative and positive Bias Temperature Instability (N/PBTI) on logic for memory high- $\kappa $ metal gate (HKMG) FinFET transistors is reported for the first time. It was observed that… read more here.

Keywords: temperature instability; impact; fin; inline formula ... See more keywords

Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics—Part I: Experimental

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Published in 2019 at "IEEE Transactions on Electron Devices"

DOI: 10.1109/ted.2018.2873419

Abstract: Bias temperature instability (BTI) and hot-carrier degradation (HCD) are among the most important reliability issues but are typically studied independently in an idealized setting. However, even though it is well understood that mixed BTI/HC degradation… read more here.

Keywords: temperature instability; hot carrier; impact mixed; stress ... See more keywords

Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs

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Published in 2021 at "IEEE Transactions on Industry Applications"

DOI: 10.1109/tia.2020.3045120

Abstract: Junction temperature sensing is an integral part of both online and offline condition monitoring where direct access to the bare die surface is not available. Given a defined power input, the junction temperature enables the… read more here.

Keywords: temperature instability; electrical parameters; temperature; junction temperature ... See more keywords

Influence of Negative Bias Temperature Instability on Single-Event Burnout in n-Channel Power VDMOS Transistors

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Published in 2025 at "IEEE Transactions on Nuclear Science"

DOI: 10.1109/tns.2025.3541492

Abstract: This article investigates the effects of cumulative damage, specifically negative bias temperature instability (NBTI), on the transient phenomenon known as single-event burnout (SEB) in power vertical diffused metal-oxide–semiconductor field-effect transistors (VDMOSFETs). Tantalum heavy ion irradiation… read more here.

Keywords: temperature; bias temperature; sensitivity; negative bias ... See more keywords

A Small-for-Gestational-Age Infant with MIRAGE Syndrome Who Developed Heat Stroke and Rhabdomyolysis due to Severe Temperature Instability.

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Published in 2023 at "Neonatology"

DOI: 10.1159/000529762

Abstract: MIRAGE syndrome is characterized by myelodysplasia, infection, restriction of growth, adrenal hypoplasia, genital phenotypes, and enteropathy. This report describes heat stroke and rhabdomyolysis caused by anhidrosis as a symptom of MIRAGE syndrome in a small-for-gestational-age… read more here.

Keywords: temperature; mirage syndrome; temperature instability; heat stroke ... See more keywords

Positive Bias Temperature Instability in SiC-Based Power MOSFETs

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Published in 2024 at "Micromachines"

DOI: 10.3390/mi15070872

Abstract: This paper investigates the threshold voltage shift (ΔVTH) induced by positive bias temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs. By analyzing ΔVTH under various gate stress voltages (VGstress) at 150 °C, distinct mechanisms… read more here.

Keywords: power mosfets; positive bias; bias temperature; temperature instability ... See more keywords