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Published in 2024 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202400464
Abstract: Carbon nanotube (CNT) is widely regarded as a promising candidate for constructing sub‐10 nm field‐effect transistors (FETs). However, limited attention is carried out on the reliability of CNT FETs, which is critical for practical application.…
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Keywords:
carbon nanotube;
temperature instability;
cnt;
bias temperature ... See more keywords
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Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2017.06.003
Abstract: Abstract Bias temperature instability (BTI) is one of the critical device degradation mechanisms in poly-Si/SiON and metal gate/high- k complementary metal-oxide-semiconductor (CMOS) technologies. Using the pre- and post-BTI flicker noise measurements, we investigated the bulk…
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Keywords:
bias temperature;
noise;
sion;
mghk mosfets ... See more keywords
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Published in 2025 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/adb87c
Abstract: This study investigates the influence of interface trap charges (ITCs) on the performance parameters of the proposed lateral hetero-stacked source with pocket n-type tunneling field-effect transistor (HSSP-nTFET). The influence of different concentrations of donor and…
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Keywords:
temperature;
hssp ntfet;
effect;
reliability ... See more keywords
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Published in 2020 at "IEEE Access"
DOI: 10.1109/access.2020.2997463
Abstract: The negative bias temperature instability (NBTI) mechanisms for Core and input/output (I/O) devices from a 130 nm partially-depleted silicon on insulator (PDSOI) technology are investigated. The I/O device degrades more than the Core device under…
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Keywords:
temperature instability;
gate;
bias temperature;
negative bias ... See more keywords
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Published in 2020 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2020.2984957
Abstract: Fin height and width dependence of negative and positive Bias Temperature Instability (N/PBTI) on logic for memory high- $\kappa $ metal gate (HKMG) FinFET transistors is reported for the first time. It was observed that…
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Keywords:
temperature instability;
impact;
fin;
inline formula ... See more keywords
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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2873419
Abstract: Bias temperature instability (BTI) and hot-carrier degradation (HCD) are among the most important reliability issues but are typically studied independently in an idealized setting. However, even though it is well understood that mixed BTI/HC degradation…
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Keywords:
temperature instability;
hot carrier;
impact mixed;
stress ... See more keywords
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Published in 2021 at "IEEE Transactions on Industry Applications"
DOI: 10.1109/tia.2020.3045120
Abstract: Junction temperature sensing is an integral part of both online and offline condition monitoring where direct access to the bare die surface is not available. Given a defined power input, the junction temperature enables the…
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Keywords:
temperature instability;
electrical parameters;
temperature;
junction temperature ... See more keywords
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Published in 2025 at "IEEE Transactions on Nuclear Science"
DOI: 10.1109/tns.2025.3541492
Abstract: This article investigates the effects of cumulative damage, specifically negative bias temperature instability (NBTI), on the transient phenomenon known as single-event burnout (SEB) in power vertical diffused metal-oxide–semiconductor field-effect transistors (VDMOSFETs). Tantalum heavy ion irradiation…
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Keywords:
temperature;
bias temperature;
sensitivity;
negative bias ... See more keywords
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Published in 2023 at "Neonatology"
DOI: 10.1159/000529762
Abstract: MIRAGE syndrome is characterized by myelodysplasia, infection, restriction of growth, adrenal hypoplasia, genital phenotypes, and enteropathy. This report describes heat stroke and rhabdomyolysis caused by anhidrosis as a symptom of MIRAGE syndrome in a small-for-gestational-age…
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Keywords:
temperature;
mirage syndrome;
temperature instability;
heat stroke ... See more keywords
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Published in 2024 at "Micromachines"
DOI: 10.3390/mi15070872
Abstract: This paper investigates the threshold voltage shift (ΔVTH) induced by positive bias temperature instability (PBTI) in silicon carbide (SiC) power MOSFETs. By analyzing ΔVTH under various gate stress voltages (VGstress) at 150 °C, distinct mechanisms…
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Keywords:
power mosfets;
positive bias;
bias temperature;
temperature instability ... See more keywords