Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application
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DOI: 10.3390/mi12040432
Abstract: Normally-off p-gallium nitride (GaN) high electron mobility transistor (HEMT) devices with multi-finger layout were successfully fabricated by use of a self-terminating etching technique with Cl2/BCl3/SF6-mixed gas plasma. This etching technique features accurate etching depth control… read more here.
Keywords: technique; multi finger; etching technique; terminating etching ... See more keywords