p-NiO junction termination extensions for GaN power devices
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DOI: 10.35848/1882-0786/ac09ff
Abstract: We report the demonstration of p-NiO layers as junction termination extensions (JTEs) for realizing high-performance GaN power devices. The p-NiO was deposited by RF sputtering, a flexible process which enables to achieve high hole densities.… read more here.
Keywords: power devices; junction termination; termination extensions; termination ... See more keywords