One-Transistor Ternary Content-Addressable Memory Based on Localized Ferroelectric Switching for Massive and Accurate Routing
Sign Up to like & getrecommendations! Published in 2024 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2023.3345412
Abstract: A novel one-transistor (1T) ternary content-addressable memory (TCAM) in which the don’t care state ‘X’ is implemented based on the localized ferroelectric polarization switching in the ambipolar ferroelectric tunnel field-effect transistors is proposed. Using local… read more here.
Keywords: ternary content; memory; addressable memory; transistor ternary ... See more keywords
Low Power Spintronic Ternary Content Addressable Memory
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2018.2869734
Abstract: Ternary Content Addressable Memory (TCAM) is used in applications that require a low power dissipation and fast data retrieval. This paper presents a domain wall-based spintronic TCAM cell. The proposed design exploits the resistive behavior… read more here.
Keywords: tcam; ternary content; addressable memory; power ... See more keywords
Resource-Efficient SRAM-Based Ternary Content Addressable Memory
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"
DOI: 10.1109/tvlsi.2016.2636294
Abstract: Static random access memory (SRAM)-based ternary content addressable memory (TCAM) offers TCAM functionality by emulating it with SRAM. However, this emulation suffers from reduced memory efficiency while mapping the TCAM table on SRAM units. This… read more here.
Keywords: tcam; ternary content; sram; based ternary ... See more keywords