High performance bilayer MoTe2 transistors with co-sputtered ternary HfAlO2 high-k dielectric
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DOI: 10.1063/5.0183755
Abstract: We demonstrated that ternary HfAlO2 amorphous film prepared with common co-sputtering technology can be a suitable gate dielectric for bilayer MoTe2 transistors. The film quality can be improved by optimizing the sputtering process and post-annealing… read more here.
Keywords: bilayer mote2; ternary hfalo2; mote2 transistors; high performance ... See more keywords