High-gradient rf tests of welded X -band accelerating cavities
Sign Up to like & getrecommendations! Published in 2021 at "Physical Review Accelerators and Beams"
DOI: 10.1103/physrevaccelbeams.24.081002
Abstract: Linacs for high-energy physics, as well as for industry and medicine, require accelerating structures which are compact, robust, and cost-effective. Small foot-print linacs require high-accelerating gradients. Currently, stable-operating gradients, exceeding $100\text{ }\text{ }\mathrm{MV}/\mathrm{m}$, have been… read more here.
Keywords: accelerating structures; text mathrm; band; mathrm ... See more keywords
Primary intrinsic defects and their charge transition levels in β–Ga2O3
Sign Up to like & getrecommendations! Published in 2020 at "Physical Review Materials"
DOI: 10.1103/physrevmaterials.4.074605
Abstract: A steady-state photocapacitance (SSPC) setup directly connected to the beamline of a MeV ion implanter is utilized to study primary intrinsic defects in $\ensuremath{\beta}\text{--}{\mathrm{Ga}}_{2}{\mathrm{O}}_{3}$ generated by He implantation at cryogenic temperatures (120 K). At low… read more here.
Keywords: text mathrm; intrinsic defects; ensuremath; primary intrinsic ... See more keywords
Optimized Dynamic $\text{R}_{ \mathrm{\scriptscriptstyle ON}}$ With p-Type Buried Layer Bridge in 700-V Triple RESURF nLDMOS
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2714703
Abstract: The dynamic on-resistance ( $\text{R}_{ \mathrm{\scriptscriptstyle ON}}$ ) problem widely exists in reduced surface field (RESURF) lateral DMOS (LDMOS), which leads to large conduction losses in the switching application. Analysing a 700-V triple RESURF LDMOS,… read more here.
Keywords: mathrm scriptscriptstyle; tex math; text mathrm; inline formula ... See more keywords
Investigation of the HfON Tunneling Layer of MONOS Device for Low-Voltage and High-Speed Operation Nonvolatile Memory Application
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Semiconductor Manufacturing"
DOI: 10.1109/tsm.2021.3068458
Abstract: We investigated the reduction of equivalent oxide thickness (EOT) of the in-situ formed Hf-based metal/oxide/nitride/oxide/silicon (MONOS) structure nonvolatile memory (NVM) device utilizing the HfON tunneling layer (TL). In case of the HfO2 TL, the SiO2… read more here.
Keywords: text mathrm; tex math; inline formula;