${Z}^{\textsf {2}}$ -FET as Capacitor-Less eDRAM Cell For High-Density Integration
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DOI: 10.1109/ted.2017.2759308
Abstract: 2-D numerical simulations are used to demonstrate the ${Z}^{\textsf {2}}$ -FET as a competitive embedded capacitor-less dynamic random access memory cell for low-power applications. Experimental results in 28-nm fully depleted-silicon on insulator technology are used… read more here.
Keywords: capacitor less; integration; capacitor; density ... See more keywords