Investigation of electrical/analog performance and reliability of gate metal and source pocket engineered DG-TFET
Sign Up to like & getrecommendations! Published in 2020 at "Microsystem Technologies"
DOI: 10.1007/s00542-020-04845-2
Abstract: Although Tunnel Field Effect Transistors (TFET) offer low leakage current and allow good scalability, but they suffer from low ON-current. Present research paper focuses on the designing of an industry ready TFET that can operate… read more here.
Keywords: gate metal; gme tfet; reliability; tfet ... See more keywords
Modeling of Dual Gate Material Hetero-dielectric Strained PNPN TFET for Improved ON Current
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Materials Engineering and Performance"
DOI: 10.1007/s11665-018-3144-x
Abstract: The tunnel field effect transistor (TFET) is considered to be a promising alternative device for future low-power VLSI circuits due to its steep subthreshold slope, low leakage current and its efficient performance at low supply… read more here.
Keywords: tfet; modeling dual; dual gate; gate material ... See more keywords
Deep Insight into DC/RF and Linearity Parameters of a Novel Back Gated Ferroelectric TFET on SELBOX Substrate for Ultra Low Power Applications
Sign Up to like & getrecommendations! Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00672-2
Abstract: In this manuscript, a novel back gated ferroelectric heterojunction TFET on SELBOX substrate (BG-Fe-HJ-STFET) has been proposed. Ferroelectric oxide is considered as gate dielectric material along with SiO2 in a vertical gate stacked manner in… read more here.
Keywords: novel back; stfet; tfet selbox; back gated ... See more keywords
Simulation Study of Dielectric Modulated Dual Material Gate TFET Based Biosensor by Considering Ambipolar Conduction
Sign Up to like & getrecommendations! Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00784-9
Abstract: In this paper, a dielectric modulated dual material gate TFET (DM-DMG_TFET)based biosensor is proposed. In order to detect various biomolecules, a nanogap cavity is formed by the overlapping the gate on the drain side. The… read more here.
Keywords: biosensor; gate; dual material; material gate ... See more keywords
Linearity Parameters Evaluation due to Lateral Straggle in Ge-Source DMDG-TFET
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DOI: 10.1007/s12633-020-00859-7
Abstract: TFET is very favourable device than MOSFET in terms of low power design and applications. The accurate fabrication of device results in satisfactory electrical characteristics. The diffusion of source/drain regions through the ion implantation technique,… read more here.
Keywords: dmdg tfet; linearity; source; lateral straggle ... See more keywords
A nano-FET structure comprised of inherent paralleled TFET and MOSFET with improved performance
Sign Up to like & getrecommendations! Published in 2020 at "Ain Shams Engineering Journal"
DOI: 10.1016/j.asej.2020.03.013
Abstract: Abstract In this paper we unveil of a new structure in which a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is paralleled with a Tunneling Field Effect Transistor (TFET) to increase on-state current. In order… read more here.
Keywords: tfet; performance; gain; structure ... See more keywords
Drain current characterization of dielectric modulated split gate TFET for bio-sensing application
Sign Up to like & getrecommendations! Published in 2021 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2020.105598
Abstract: Abstract This paper presents an analytical surface potential and drain current model of split gate (SG) Tunnel Field Effect Transistor (TFET) for label free detection of biomolecules e.g. protein, biotine, DNA, etc., utilizing the concept… read more here.
Keywords: dielectric; drain current; drain; split gate ... See more keywords
Design of negative capacitance tunneling field effect transistor with dual-source U-shape channel, super-steep subthreshold swing and large on-state current
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106905
Abstract: Abstract With the rapid development of semiconductor process, both tunneling field effect transistor (TFET) and negative capacitance field effect transistor (NCFET) are regarded as the effective low power devices. In this paper, a novel silicon-based… read more here.
Keywords: field; negative capacitance; effect transistor; tfet ... See more keywords
Surface Ge-rich p-type SiGe channel tunnel field-effect transistor fabricated by local condensation technique
Sign Up to like & getrecommendations! Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2019.107701
Abstract: Abstract In this study, tunnel field-effect transistor (TFET) which has surface Ge-rich SiGe nanowire as a channel has been demonstrated. There are improvements in terms of on-current and subthreshold swing (SS) comparing with control groups… read more here.
Keywords: sige channel; surface; condensation; channel ... See more keywords
Impact of device engineering on analog/RF performances of tunnel field effect transistors
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa66bd
Abstract: The tunnel field effect transistor (TFET) and its analog/RF performance is being aggressively studied at device architecture level for low power SoC design. Therefore, in this paper we have investigated the influence of the gate-drain… read more here.
Keywords: tunnel field; gate; analog; tfet ... See more keywords
Design of bilayer graphene nanoribbon tunnel field effect transistor
Sign Up to like & getrecommendations! Published in 2021 at "Circuit World"
DOI: 10.1108/cw-05-2020-0079
Abstract: Purpose The purpose of this paper is to design novel tunnel field effect transistor (TFET) using graphene nanoribbons (GNRs). Design/methodology/approach To design the proposed TFET, the bilayer GNRs (BLGNRs) have been used as the channel… read more here.
Keywords: tunnel field; effect transistor; tfet; field effect ... See more keywords