Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset
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DOI: 10.1109/jeds.2020.3002265
Abstract: This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel field effect transistor (DG TFET). The mitigation technique for the data recovery after the heavy ion strike is discussed. The conventional… read more here.
Keywords: radiation; tfet sram; sram cell; mitigation ... See more keywords