Low‐Temperature Polysilicon Oxide Thin‐Film Transistors with Coplanar Structure Using Six Photomask Steps Demonstrating High Inverter Gain of 264 V V−1
Sign Up to like & getrecommendations! Published in 2020 at "Advanced Engineering Materials"
DOI: 10.1002/adem.201901497
Abstract: The low‐temperature polysilicon oxide (LTPO) complementary metal‐oxide‐semiconductor (CMOS) thin‐film transistors (TFTs) is fabricated by p‐type low‐temperature polysilicon (LTPS) TFT and n‐type amorphous indium‐gallium‐zinc oxide (a‐IGZO) TFT using coplanar structure. A double‐stack SiO2 layer deposited by… read more here.
Keywords: tft; temperature; temperature polysilicon; polysilicon oxide ... See more keywords
High‐Temperature‐Resistant Polyimide Films With Enhanced Tg for Improved Performance in Flexible TFT Devices
Sign Up to like & getrecommendations! Published in 2025 at "Journal of Applied Polymer Science"
DOI: 10.1002/app.56856
Abstract: Flexible display devices based on polyimide (PI) materials have found widespread applications in the display industry. However, the lower glass transition temperature (Tg) of PI Films limits the process temperature of low‐temperature poly silica (LTPS),… read more here.
Keywords: temperature; tft devices; resistant polyimide; tft ... See more keywords
A randomized comparison of three chest compression techniques and associated hemodynamic effect during infant CPR: A randomized manikin study
Sign Up to like & getrecommendations! Published in 2017 at "American Journal of Emergency Medicine"
DOI: 10.1016/j.ajem.2017.04.024
Abstract: Introduction: Pediatric cardiac arrest is an uncommon but critical life‐threatening event requiring effective cardiopulmonary resuscitation. High‐quality cardio‐pulmonary resuscitation (CPR) is essential, but is poorly performed, even by highly skilled healthcare providers. The recently described two‐thumb… read more here.
Keywords: ttht; cpr; chest compression; tft ... See more keywords
Enhanced infrared photoresponse of a new InGaZnO TFT based on Ge capping layer and high-k dielectric material
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106967
Abstract: Abstract In this paper, a novel InGaZnO (IGZO) Infrared (IR) thin-film Phototransistor (Photo-TFT) consisting of Germanium capping layer (Ge-CL) and high-k dielectric material is proposed and numerically investigated. The role of introducing Ge-CL/IGZO heterojunction and… read more here.
Keywords: high dielectric; layer high; capping layer; dielectric material ... See more keywords
Tofacitinib is a mechanism-based inactivator of cytochrome P450 3A4.
Sign Up to like & getrecommendations! Published in 2019 at "Chemical research in toxicology"
DOI: 10.1021/acs.chemrestox.9b00141
Abstract: Tofacitinib (TFT) is an oral JAK inhibitor which has been approved for the treatment of moderately and severely active rheumatoid arthritis. TFT was found to show concentration-, time- and NADPH-dependent inhibition of CYP3A4, and irreversibility… read more here.
Keywords: tofacitinib; mechanism based; based inactivator; inactivation ... See more keywords
Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor.
Sign Up to like & getrecommendations! Published in 2017 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b00714
Abstract: Reduced graphene oxide quantum dot (rGOQD) devices in formats of capacitor and thin film transistor (TFT) were demonstrated and examined as the first trial to achieve nonambipolar channel property. In addition, through a gold nanoparticle… read more here.
Keywords: graphene oxide; oxide quantum; thin film; reduced graphene ... See more keywords
Toward Adequate Operation of Amorphous Oxide Thin-Film Transistors for Low-Concentration Gas Detection.
Sign Up to like & getrecommendations! Published in 2018 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.7b18657
Abstract: We suggest the use of a thin-film transistor (TFT) composed of amorphous InGaZnO (a-IGZO) as a channel and a sensing layer for low-concentration NO2 gas detection. Although amorphous oxide layers have a restricted surface area… read more here.
Keywords: detection; amorphous oxide; gas; tft ... See more keywords
Excess Polymer in Single-Walled Carbon Nanotube Thin-Film Transistors: Its Removal Prior to Fabrication Is Unnecessary.
Sign Up to like & getrecommendations! Published in 2021 at "ACS nano"
DOI: 10.1021/acsnano.0c08584
Abstract: Ultrapure semiconducting single-walled carbon nanotube (sc-SWNT) dispersions produced through conjugated polymer sorting are ideal candidates for the fabrication of solution-processed organic electronic devices on a commercial scale. Protocols for sorting and dispersing ultrapure sc-SWNTs with… read more here.
Keywords: fabrication; polymer; single walled; spectroscopy ... See more keywords
Nanoscale surface engineering of a high-k ZrO2/SiO2 gate insulator for a high performance ITZO TFT via plasma-enhanced atomic layer deposition
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Materials Chemistry C"
DOI: 10.1039/d0tc02419h
Abstract: We investigated a high dielectric constant (k) gate insulator (GI) based on the tandem structure of ZrO2 and SiO2 to optimize a high performance oxide thin-film transistor (TFT). We analyzed tandem structures with various SiO2… read more here.
Keywords: tft; zro2 sio2; high performance;
Fabrication of an In2O3 NP-based high-performance low-operating voltage phototransistor and tuning of its photosensitivity from UV to blue region.
Sign Up to like & getrecommendations! Published in 2025 at "Nanoscale"
DOI: 10.1039/d5nr00201j
Abstract: In this work, a visible-blind low-operating voltage phototransistor was fabricated using colloidal In2O3 nanoparticles (NPs) via a solution process technique, and its photosensitivity was tuned to the blue region by adding a PbI2 layer to… read more here.
Keywords: in2o3; photosensitivity; voltage; tft ... See more keywords
Fabrication of amorphous IGZO thin film transistor using self-aligned imprint lithography with a sacrificial layer
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5022714
Abstract: An amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) was fabricated by a self-aligned imprint lithography (SAIL) method with a sacrificial photoresist layer. The SAIL is a top-down method to fabricate a TFT using a three-dimensional… read more here.
Keywords: layer; fabrication; process; sacrificial layer ... See more keywords