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Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2801025
Abstract: A core scheme including dc and capacitance models of amorphous indium gallium zinc oxide thin-film transistors is presented based on terms of surface potential. Due to the intrinsic physical fact, carrier degeneracy is taken into…
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Keywords:
igzo tfts;
compact model;
model;
core compact ... See more keywords