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Published in 2019 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.201900359
Abstract: Coplanar amorphous indium gallium zinc oxide (a‐InGaZnO) thin film transistors (TFTs) with photopatternable ionic polymer gate dielectrics are fabricated and their inverter/shift register circuits are demonstrated. As a gate dielectric, ionic‐polyurethane acrylate (i‐PUA) can be…
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Keywords:
coplanar;
tfts photopatternable;
voltage;
photopatternable ionic ... See more keywords