Conduction band offset-dependent induced threshold voltage shifts in a-InGaZnO TFTs under positive bias illumination stress
Sign Up to like & getrecommendations! Published in 2021 at "AIP Advances"
DOI: 10.1063/5.0035379
Abstract: In this paper, the dependence of threshold voltage (Vth) changes to amorphous-indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) under positive bias light illumination (PBIS) on the height of the conduction band offset was… read more here.
Keywords: threshold voltage; conduction band; bias; positive bias ... See more keywords
Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14040842
Abstract: In this work, an electrical stability model based on surface potential is presented for amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) under positive-gate-bias stress (PBS) and light stress. In this model, the sub-gap density of… read more here.
Keywords: stress; tfts positive; surface potential; bias stress ... See more keywords