Kinetics of interfacial microstructural variation across insulator-thermoelectric semiconductor interface and its effects on thermoelectric properties of magnesium silicide thin films
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DOI: 10.1016/j.mtla.2019.100375
Abstract: Abstract Thermoelectric semiconductor magnesium silicide epitaxial films were fabricated on insulating (001) alumina (Al2O3) and (111) magnesium oxide (MgO) substrates using low temperature (220 °C) RF magnetic sputtering followed by high temperature (500 °C) annealing.… read more here.
Keywords: microscopy; magnesia; magnesium silicide; thermoelectric semiconductor ... See more keywords