Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy
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DOI: 10.3390/mi13030466
Abstract: In this paper, thermoreflectance microscopy was used to measure the high spatial resolution temperature distribution of the p-GaN HEMT under high power density. The maximum temperature along the GaN channel was located at the drain-side… read more here.
Keywords: thermoreflectance microscopy; gan hemt; hemt device; microscopy ... See more keywords