Reducing disorder in Ge quantum wells by using thick SiGe barriers
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DOI: 10.1063/5.0242746
Abstract: We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semiconductor–dielectric interface. Across several heterostructure field effect transistors, we… read more here.
Keywords: sige barriers; thick sige; disorder; reducing disorder ... See more keywords