Defect Engineering in Thickness-Controlled Bi2O2Se-Based Transistors by Argon Plasma Treatment.
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DOI: 10.1021/acsami.1c24260
Abstract: We present a simple, effective, and controllable method to uniformly thin down the thickness of as-exfoliated two-dimensional Bi2O2Se nanoflakes using Ar+ plasma treatment. Atomic force microscopy (AFM) images and Raman spectra indicate that the surface… read more here.
Keywords: thickness controlled; plasma treatment; bi2o2se; treatment ... See more keywords