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Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c05704
Abstract: Recently explored black arsenic is a layered two-dimensional low-symmetry semiconducting material that, owing to its inherent narrow bandgap (∼0.31 eV) in its bulk form, is attractive for mid-infrared optoelectronics. Several studies have been conducted on…
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Keywords:
mid infrared;
thickness photoresponse;
black arsenic;
channel thickness ... See more keywords