Thickness Scaling of Integrated Pt/(Al 0.9 Sc 0.1 )N/Pt Capacitor Stacks to 30 nm
Sign Up to like & getrecommendations! Published in 2025 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202500451
Abstract: The total thickness scaling of electrodes and the (Al0.9Sc0.1)N layer is evaluated for ferroelectric memory applications. The good crystal orientation and large remanent polarization (Pr) above 100 µC cm−2 are obtained for 160‐nm‐thick (Al0.9Sc0.1)N films… read more here.
Keywords: thickness scaling; bottom electrode; scaling integrated; electrode ... See more keywords
Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory.
Sign Up to like & getrecommendations! Published in 2022 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.2c15369
Abstract: The comparatively high coercive field in Hf0.5Zr0.5O2 (HZO) and other HfO2-based ferroelectric thin films leads to two critical challenges for their application in embedded ferroelectric memory: high operating voltage due to a large thickness-field product… read more here.
Keywords: thickness scaling; operating voltage; voltage; memory ... See more keywords