Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiNx caps
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DOI: 10.1016/j.mssp.2021.105907
Abstract: Abstract Understanding the individual contributions of the factors that influence the electrical properties of a material is important for controlling these properties. In this study, the effects of multiple factors on the electrical properties of… read more here.
Keywords: electrical properties; algan gan; barrier algan; gan heterojunctions ... See more keywords
Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity
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DOI: 10.1088/1361-6641/ac0b93
Abstract: In this study, novel AlGaN/GaN Schottky barrier diodes (SBDs) are fabricated with thin-barrier (5 nm) AlGaN/GaN heterostructures, featuring recess-free technology, eliminating bombardment plasma damage, and leading to high device uniformity. Combining a gated-edge termination (GET)… read more here.
Keywords: schottky barrier; barrier; gan schottky; thin barrier ... See more keywords