Ultra-thin germanium-tin on insulator structure through direct bonding technique
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DOI: 10.1088/1361-6641/aae620
Abstract: Ultra-thin germanium-tin on insulator (GeSnOI) structure on Si substrate has been fabricated using the direct bonding and substrate etching techniques. This process involves the growth of GeSn layer on Ge (001) substrate followed by the… read more here.
Keywords: thin germanium; ultra thin; tin insulator; structure ... See more keywords