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Published in 2017 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2017.01.009
Abstract: Abstract The current-voltage (I-V) characteristics of Au/n-GaP Schottky barrier diode was analyzed in wide temperature range of 220–400 K. The conduction mechanism in the low bias region, except for 220 K and 240 K, was identified as tunneling…
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Keywords:
properties gallium;
temperature;
transport properties;
insulating layer ... See more keywords
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Published in 2017 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.6b12104
Abstract: Described here is a semiquantitative theoretical treatment of the kinetics of outer sphere electrochemical reactions. The framework presented here, which is based on simple physical arguments, predicts heterogeneous rate constants consistent with previous experimental observations…
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Keywords:
electrochemical nonadiabatic;
electron transfer;
solution;
transfer via ... See more keywords