High-K metal gate stacks with ultra-thin interfacial layers formed by low temperature microwave-based plasma oxidation
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DOI: 10.1016/j.mee.2017.05.041
Abstract: Abstract Ultra-thin interfacial silicon oxide layers are grown by microwave-based plasma oxidation at temperatures below 200 °C. The influence of plasma gas composition and plasma pulsing on layer properties is tested. The oxides are compared to… read more here.
Keywords: ultra thin; high metal; microwave based; plasma oxidation ... See more keywords