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   Articles with "threading dislocations" as a keyword



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Annealing effect on threading dislocations in a GaN grown on Si substrate

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recommendations! Published in 2017 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2017.01.001

Abstract: Abstract Effect of rapid thermal annealing (RTA) on crystal defects in a GaN layer grown on a (111)Si substrate was investigated by photoluminescence (PL) and transmission electron microscopy (TEM) analyses. The PL spectra suggested that… read more here.

Keywords: annealing effect; effect; dislocations gan; effect threading ... See more keywords
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Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer

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recommendations! Published in 2020 at "Journal of Crystal Growth"

DOI: 10.1016/j.jcrysgro.2020.125575

Abstract: Abstract We report reducing the density of threading dislocations (TDs) in stacking-fault-free semipolar (20 2 ¯ 1 ) GaN grown on sapphire by inserting an AlGaN/GaN superlattice (SL). We have studied the influence of AlGaN/GaN… read more here.

Keywords: gan superlattice; algan gan; emitting diodes; light emitting ... See more keywords

Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells.

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recommendations! Published in 2022 at "Nano letters"

DOI: 10.1021/acs.nanolett.2c01479

Abstract: The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out using correlative transmission electron microscopy (TEM) and atom probe tomography (APT). The correlative TEM/APT analysis on the same… read more here.

Keywords: threading dislocations; diffusion indium; quantum wells; atomic diffusion ... See more keywords

The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers

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recommendations! Published in 2020 at "Scientific Reports"

DOI: 10.1038/s41598-020-74030-y

Abstract: III-nitride compound semiconductors are breakthrough materials regarding device applications. However, their heterostructures suffer from very high threading dislocation (TD) densities that impair several aspects of their performance. The physical mechanisms leading to TD nucleation in… read more here.

Keywords: iii nitride; nucleation threading; partial dislocations; nucleation ... See more keywords

Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation

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recommendations! Published in 2025 at "Scientific Reports"

DOI: 10.1038/s41598-024-83398-0

Abstract: GaN is rapidly gaining attention for implementation in power electronics but is still impacted by its high density of threading dislocations (TDs), which have been shown to facilitate current leakage through devices limiting their performance… read more here.

Keywords: threading dislocations; dimensional photoluminescence; photoluminescence imaging; three dimensional ... See more keywords

Density of bunched threading dislocations in epitaxial GaN layers as determined using X-ray diffraction

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recommendations! Published in 2018 at "Journal of Applied Physics"

DOI: 10.1063/1.5009521

Abstract: X-ray diffraction is one of the most popular experimental methods employed for determination of dislocation densities, as it can recognize both the strain fields and the local lattice rotations produced by dislocations. The main challenge… read more here.

Keywords: ray diffraction; dislocation; diffraction; bunched threading ... See more keywords

Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors

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recommendations! Published in 2018 at "Journal of Applied Physics"

DOI: 10.1063/1.5010859

Abstract: The influence of open-core threading dislocations on the bias-dependent external quantum efficiency (EQE) of bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductor-metal (MSM) photodetectors (PDs) is presented. These defects originate at the Al0.5Ga0.5N/AlN interface and terminate on the Al0.5Ga0.5N surface… read more here.

Keywords: al0 5ga0; open core; metal; core threading ... See more keywords

Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates

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recommendations! Published in 2021 at "Journal of Applied Physics"

DOI: 10.1063/5.0053766

Abstract: The propagation behavior of threading dislocations (TDs) and the effects of Burgers vectors in hydride vapor phase epitaxy (HVPE) GaN bulk crystals generated on Na-flux-grown GaN and in a commercially available HVPE-grown GaN bulk crystal… read more here.

Keywords: microscopy; threading dislocations; flux grown; gan bulk ... See more keywords

Multi-microscopy characterization of threading dislocations in CVD-grown diamond films

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recommendations! Published in 2024 at "Applied Physics Letters"

DOI: 10.1063/5.0186842

Abstract: We present site-coincident imaging of a high dislocation density boron-doped chemical vapor deposition-grown homoepitaxial (001) diamond film using electron channeling contrast imaging (ECCI), cathodoluminescence, transmission electron microscopy (TEM), and scanning secondary ion mass spectroscopy (SIMS).… read more here.

Keywords: diamond films; threading dislocations; microscopy characterization; multi microscopy ... See more keywords

Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO3 Thin Films

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recommendations! Published in 2022 at "Materials"

DOI: 10.3390/ma15072417

Abstract: In spite of great application potential as transparent n-type oxides with high electrical mobility at room temperature, threading dislocations (TDs) often found in the (Ba,La)SnO3 (BLSO) films can limit their intrinsic properties so that their… read more here.

Keywords: effect; blso; electronic structure; threading dislocations ... See more keywords

Nondestructive characterization of threading dislocations in graded buffer layers of inverted metamorphic solar cells by two-photon excitation spectroscopy

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recommendations! Published in 2021 at "Applied Physics Express"

DOI: 10.35848/1882-0786/ac2d10

Abstract: In order to realize lattice-mismatched solar cells with high conversion efficiencies, it is necessary to characterize the threading dislocations generated at the interfaces between materials with different lattice constants. We report on the characterization of… read more here.

Keywords: two photon; cells two; characterization threading; spectroscopy ... See more keywords