Annealing effect on threading dislocations in a GaN grown on Si substrate
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.01.001
Abstract: Abstract Effect of rapid thermal annealing (RTA) on crystal defects in a GaN layer grown on a (111)Si substrate was investigated by photoluminescence (PL) and transmission electron microscopy (TEM) analyses. The PL spectra suggested that… read more here.
Keywords: annealing effect; effect; dislocations gan; effect threading ... See more keywords
Improving performance of semipolar (202¯1) light emitting diodes through reduction of threading dislocations by AlGaN/GaN superlattice interlayer
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125575
Abstract: Abstract We report reducing the density of threading dislocations (TDs) in stacking-fault-free semipolar (20 2 ¯ 1 ) GaN grown on sapphire by inserting an AlGaN/GaN superlattice (SL). We have studied the influence of AlGaN/GaN… read more here.
Keywords: gan superlattice; algan gan; emitting diodes; light emitting ... See more keywords
Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells.
Sign Up to like & getrecommendations! Published in 2022 at "Nano letters"
DOI: 10.1021/acs.nanolett.2c01479
Abstract: The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out using correlative transmission electron microscopy (TEM) and atom probe tomography (APT). The correlative TEM/APT analysis on the same… read more here.
Keywords: threading dislocations; diffusion indium; quantum wells; atomic diffusion ... See more keywords
The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers
Sign Up to like & getrecommendations! Published in 2020 at "Scientific Reports"
DOI: 10.1038/s41598-020-74030-y
Abstract: III-nitride compound semiconductors are breakthrough materials regarding device applications. However, their heterostructures suffer from very high threading dislocation (TD) densities that impair several aspects of their performance. The physical mechanisms leading to TD nucleation in… read more here.
Keywords: iii nitride; nucleation threading; partial dislocations; nucleation ... See more keywords
Density of bunched threading dislocations in epitaxial GaN layers as determined using X-ray diffraction
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5009521
Abstract: X-ray diffraction is one of the most popular experimental methods employed for determination of dislocation densities, as it can recognize both the strain fields and the local lattice rotations produced by dislocations. The main challenge… read more here.
Keywords: ray diffraction; dislocation; diffraction; bunched threading ... See more keywords
Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5010859
Abstract: The influence of open-core threading dislocations on the bias-dependent external quantum efficiency (EQE) of bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductor-metal (MSM) photodetectors (PDs) is presented. These defects originate at the Al0.5Ga0.5N/AlN interface and terminate on the Al0.5Ga0.5N surface… read more here.
Keywords: al0 5ga0; open core; metal; core threading ... See more keywords
Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Applied Physics"
DOI: 10.1063/5.0053766
Abstract: The propagation behavior of threading dislocations (TDs) and the effects of Burgers vectors in hydride vapor phase epitaxy (HVPE) GaN bulk crystals generated on Na-flux-grown GaN and in a commercially available HVPE-grown GaN bulk crystal… read more here.
Keywords: microscopy; threading dislocations; flux grown; gan bulk ... See more keywords
Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO3 Thin Films
Sign Up to like & getrecommendations! Published in 2022 at "Materials"
DOI: 10.3390/ma15072417
Abstract: In spite of great application potential as transparent n-type oxides with high electrical mobility at room temperature, threading dislocations (TDs) often found in the (Ba,La)SnO3 (BLSO) films can limit their intrinsic properties so that their… read more here.
Keywords: effect; blso; electronic structure; threading dislocations ... See more keywords
Nondestructive characterization of threading dislocations in graded buffer layers of inverted metamorphic solar cells by two-photon excitation spectroscopy
Sign Up to like & getrecommendations! Published in 2021 at "Applied Physics Express"
DOI: 10.35848/1882-0786/ac2d10
Abstract: In order to realize lattice-mismatched solar cells with high conversion efficiencies, it is necessary to characterize the threading dislocations generated at the interfaces between materials with different lattice constants. We report on the characterization of… read more here.
Keywords: two photon; cells two; characterization threading; spectroscopy ... See more keywords
Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Express"
DOI: 10.7567/apex.11.031004
Abstract: The three-dimensional imaging of threading dislocations in GaN films was demonstrated using two-photon excitation photoluminescence. The threading dislocations were shown as dark lines. The spatial resolutions near the surface were about 0.32 and 3.2 µm… read more here.
Keywords: three dimensional; imaging threading; dislocations gan; using two ... See more keywords